Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Number of Pins  

7

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

190A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

380W Tc

Turn Off Delay Time  

100 ns

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2005

JESD-609 Code  

e3

Part Status  

Discontinued

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

6

Termination  

SMD/SMT

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G6

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

380W

Case Connection  

DRAIN

Turn On Delay Time  

19 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

4m Ω @ 110A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

9830pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

230nC @ 10V

Rise Time  

56ns

Vgs (Max)  

±20V

Fall Time (Typ)  

48 ns

Reverse Recovery Time  

60 ns

Continuous Drain Current (ID)  

190A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.004Ohm

Drain to Source Breakdown Voltage  

100V

Dual Supply Voltage  

100V

Avalanche Energy Rating (Eas)  

330 mJ

Nominal Vgs  

4 V

Height  

4.55mm

Length  

10.67mm

Width  

9.65mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free